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Samsung 990 EVO Plus 4TB NVMe M.2 SSD (MZ-V9S4T0BW)

  • Massive 4TB NVMe storage for professional workloads
  • Ultra-fast up to 7,250MB/s read & 6,300MB/s write speeds
  • PCIe Gen4 x4 / Gen5 x2 NVMe 2.0 next-gen interface
  • Ideal for 8K editing, gaming libraries & enterprise use

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Overview Technical Details Review
  • Experience extreme performance and massive storage capacity with the Samsung 990 EVO Plus 4TB NVMe M.2 SSD, engineered for professionals, gamers, and power users who demand top-tier speed, efficiency, and reliability. Powered by Samsung’s latest V-NAND technology and advanced controller architecture, this SSD delivers ultra-fast sequential read speeds up to 7,250MB/s and write speeds up to 6,300MB/s, ensuring instant system responsiveness, rapid file transfers, and seamless multitasking even under heavy workloads.

 

  • Built for demanding applications such as 4K/8K video editing, large-scale gaming libraries, 3D rendering, AI workloads, and enterprise-level data storage, the Samsung 990 EVO Plus 4TB provides uncompromising performance with exceptional endurance and stability. Its PCIe Gen4.0 x4 and PCIe Gen5.0 x2 NVMe 2.0 interface ensures next-generation responsiveness with improved energy efficiency, offering up to 73% better performance-per-watt compared to previous generations.

 

  • The M.2 2280 form factor ensures easy installation in modern desktops and laptops without cables, maintaining a clean and efficient build. Samsung Magician Software enhances the user experience with drive health monitoring, firmware updates, performance optimization, and advanced security management tools for long-term reliability.

 

  • If you are looking for maximum NVMe storage capacity combined with elite-level performance, the Samsung 990 EVO Plus 4TB is a premium storage solution designed for heavy professional workloads and high-performance computing environments.
Brand Samsung
Series 990 EVO Plus
Model Number MZ-V9S4T0BW
Storage Capacity 4TB
Form Factor M.2 2280
Interface PCIe Gen4.0 x4 / Gen5.0 x2 NVMe 2.0
NAND Type Samsung V-NAND TLC
Sequential Read Speed Up to 7,250 MB/s
Sequential Write Speed Up to 6,300 MB/s
Random Read Up to ~850,000 IOPS
Random Write Up to ~1,350,000 IOPS
Power Efficiency Up to 73% improved per watt
Endurance (TBW) 2,400 TBW
MTBF 1.5 Million Hours
Operating Temperature 0°C to 70°C
Encryption AES 256-bit (supported)
Software Support Samsung Magician Software
Weight Approx. 9g
Warranty 5 Years Limited Warranty

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