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Samsung 990 EVO Plus 4TB PCIe Gen4/5 NVMe M.2 SSD 7250MB/s ( MZ-V9S4T0BW )

  • Massive 4TB NVMe storage for professional workloads
  • Ultra-fast up to 7,250MB/s read & 6,300MB/s write speeds
  • PCIe Gen4 x4 / Gen5 x2 NVMe 2.0 next-gen interface
  • Ideal for 8K editing, gaming libraries & enterprise use

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Overview Technical Details Review

Experience extreme performance and massive storage capacity with the Samsung 990 EVO Plus 4TB NVMe M.2 SSD, engineered for professionals, gamers, and power users who demand top-tier speed, efficiency, and reliability. Powered by Samsung’s latest V-NAND technology and advanced controller architecture, this SSD delivers ultra-fast sequential read speeds up to 7,250MB/s and write speeds up to 6,300MB/s, ensuring instant system responsiveness, rapid file transfers, and seamless multitasking even under heavy workloads.

 

Built for demanding applications such as 4K/8K video editing, large-scale gaming libraries, 3D rendering, AI workloads, and enterprise-level data storage, the Samsung 990 EVO Plus 4TB provides uncompromising performance with exceptional endurance and stability. Its PCIe Gen4.0 x4 and PCIe Gen5.0 x2 NVMe 2.0 interface ensures next-generation responsiveness with improved energy efficiency, offering up to 73% better performance-per-watt compared to previous generations.

 

The M.2 2280 form factor ensures easy installation in modern desktops and laptops without cables, maintaining a clean and efficient build. Samsung Magician Software enhances the user experience with drive health monitoring, firmware updates, performance optimization, and advanced security management tools for long-term reliability.

 

If you are looking for maximum NVMe storage capacity combined with elite-level performance, the Samsung 990 EVO Plus 4TB is a premium storage solution designed for heavy professional workloads and high-performance computing environments.

Brand Samsung
Series 990 EVO Plus
Model Number MZ-V9S4T0BW
Storage Capacity 4TB
Form Factor M.2 2280
Interface PCIe Gen4.0 x4 / Gen5.0 x2 NVMe 2.0
NAND Type Samsung V-NAND TLC
Sequential Read Speed Up to 7,250 MB/s
Sequential Write Speed Up to 6,300 MB/s
Random Read Up to ~850,000 IOPS
Random Write Up to ~1,350,000 IOPS
Power Efficiency Up to 73% improved per watt
Endurance (TBW) 2,400 TBW
MTBF 1.5 Million Hours
Operating Temperature 0°C to 70°C
Encryption AES 256-bit (supported)
Software Support Samsung Magician Software
Weight Approx. 9g
Warranty 5 Years Limited Warranty

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